Presentation of the equipment's characteristics
LPCVD low-pressure chemical vapor deposition equipment (scientific research LPCVD) deposits various functional films (mainly Si₃N₄, SiO₂ and Poly silicon films) on substrates by chemical reaction vapor phase epitaxy under low pressure and high temperature conditions. It can be used in scientific research, process development, and small-batch trial production. The equipment usually adopts a high-precision temperature control system to ensure uniform and stable film growth at high temperatures; and cooperates with programmable gas flow and reaction chamber pressure control to achieve precise adjustment of film thickness, stress and electrical properties. The main body of the equipment is often equipped with multi-section heating furnace tubes to meet the process requirements of different materials and different temperature gradients. It also has the characteristics of high degree of automation, comprehensive data monitoring and recording, and good process repeatability, providing a reliable platform for new material research and development and microelectronic device preparation.
processed samples
LPCVD low-pressure chemical vapor deposition equipment (research LPCVD) deposits various functional films (mainly Si3N4, SiO2 and Poly silicon films) on substrates by chemical reaction vapor phase epitaxy under low pressure and high temperature conditions. It can be used for scientific research, practical teaching, and small device manufacturing.
Equipment structure and features
1. Miniaturization, convenient laboratory operation and use, greatly reducing experimental costs
Two substrate sizes of 2 inches or 4 inches; 1 to 3 pieces are loaded each time.
Substrate placement method: three types of substrate brackets are configured, vertical, horizontal, and with an angle.
Substrate shape type: irregular shaped loose pieces, φ2 to 4 inch standard substrates.
2. The equipment is a horizontal tube horizontal structure
It consists of a quartz tube reaction chamber, a heat shield furnace cabinet, an electrical control system, a vacuum system, a gas circuit system, a temperature control system, a pressure control system, and a gas cylinder cabinet.
The reaction chamber is made of high-purity quartz, which is corrosion-resistant, anti-pollution, has a low leakage rate, and is suitable for high-temperature use; the electronic control part of the equipment adopts an advanced detection and control system, with accurate values, stable and reliable performance.
3. The system provides automatic control and dust-free device
LPCVD low-pressure chemical vapor deposition equipment (production type LPCVD)
Equipment function
The equipment deposits various functional films (mainly Si3N4, SiO2 and Poly silicon films) on the substrate by chemical reaction vapor phase epitaxy under low pressure and high temperature conditions.
Related coating processes can be provided.
Equipment structure and features:
The equipment is a horizontal tube horizontal structure, consisting of a quartz tube reaction chamber, a heat insulation cover furnace cabinet, an electrical control system, a vacuum system, a gas circuit system, a temperature control system, a pressure control system and a gas cylinder cabinet.
The reaction chamber is made of high-purity quartz, which is corrosion-resistant, anti-pollution, has a low leakage rate, and is suitable for high-temperature use; the electronic control part of the equipment adopts an advanced detection and control system, with accurate values, stable and reliable performance.
The entire process is managed by a computer, which monitors and automatically controls process parameters such as furnace temperature, gas flow, pressure, valve action, pump opening and closing, etc. It can also be controlled manually.
Type | Parameter |
Film Types | Si₃N₄, Poly-Si, SiO₂, etc. |
Maximum Temperature | 1200°C |
Constant Temperature Zone Length | Configured according to user requirements |
Temperature Control Accuracy in Constant Zone | ≤±0.5°C |
Working Pressure Range | 13~1330Pa |
Film Non-Uniformity | ≤±5% |
Substrate Loading Capacity | Standard substrates: 1~3 pieces; multiple irregular-sized wafers |
Pressure Control | Closed-loop gas filling control |
Loading Method | Manual sample loading/unloading |
Type | Parameter |
Film Types | Si₃N₄, Poly-Si, SiO₂, etc. |
Maximum Temperature | 1200°C |
Constant Temperature Zone Length | Configured according to user requirements |
Temperature Control Accuracy in Constant Zone | ≤±0.5°C |
Working Pressure Range | 13~1330Pa |
Film Non-Uniformity | ≤±5% |
Substrate Loading Capacity per Batch | 100 wafers |
Total Power | 16kW |
Cooling Water Consumption | 2m³/h |
Pressure Control | Closed-loop gas filling control |
Loading Method | Automatic boat loading |




Related products
Mastering Core Technologies in High-Performance Metal Additive Manufacturing and Surface Treatment