PECVD plasma enhanced chemical vapor deposition equipment is mainly used for the growth of silicon nitride and silicon oxide thin films in a clean vacuum environment; it uses single-frequency or dual-frequency plasma enhanced chemical vapor deposition technology and is an ideal choice for depositing high-quality silicon nitride and silicon oxide films. The equipment takes advantage of low temperature and low energy consumption, generates high-density plasma in the reaction chamber, effectively excites gas molecules, promotes chemical reactions, and deposits uniform, dense, and well-adhesive thin films on the substrate surface. The PECVD process can not only achieve precise film thickness control, but also improve the interface quality and overall structural stability of the film layer. Therefore, it is widely used in the manufacture of integrated circuits, flat panel displays, solar cells, and other microelectronic devices. In addition, the equipment is usually equipped with an automated control system to achieve precise control of key parameters such as temperature, pressure, and gas flow, thereby improving production efficiency and product consistency, and meeting the high standards for film quality under different process requirements.

PECVD plasma enhanced chemical vapor deposition equipment is mainly used for the growth of silicon nitride and silicon oxide films in a clean vacuum environment; it uses single-frequency or dual-frequency plasma enhanced chemical vapor deposition technology and is an ideal process equipment for depositing high-quality silicon nitride and silicon oxide films. The equipment takes advantage of low temperature and low energy consumption, generates high-density plasma in the reaction chamber, effectively excites gas molecules, promotes chemical reactions, and deposits uniform, dense, and well-adhesive films on the substrate surface. The PECVD process can not only achieve precise film thickness control, but also improve the interface quality and overall structural stability of the film layer. Therefore, it is widely used in the manufacture of integrated circuits, flat panel displays, solar cells, and other microelectronic devices. In addition, the equipment is usually equipped with an automated control system to achieve precise control of key parameters such as temperature, pressure, and gas flow, thereby improving production efficiency and product consistency, and meeting the high standards for film quality under different process requirements.

Equipment use and functional characteristics
1. The equipment is a high-vacuum single-frequency or dual-frequency plasma enhanced chemical vapor deposition PECVD thin film equipment, which is mainly used to prepare silicon nitride and silicon oxide films.
2. The equipment has strong protection functions, including vacuum system detection and protection, water pressure detection and protection, phase sequence detection and protection, and temperature detection and protection.
3. Equipped with tail gas treatment device.
Equipment safety design
1. Power system detection and protection
2. Set vacuum detection and alarm protection function
3. Temperature detection and alarm protection
4. Pressure detection and flow detection and alarm protection of cooling circulating water system
5. Process gas circuit contains anti-cross contamination device

The equipment is divided into single-chamber and multi-chamber PECVD equipment. The actual situation is subject to the customized results required by the customer.