The MOCVD (Metal-Organic Chemical Vapor Deposition) equipment is specifically engineered for the epitaxial growth of high-precision materials such as GaN and ZnO, incorporating state-of-the-art process and control technologies. It utilizes an ultra-pure gas delivery system to ensure minimal contamination during material transport, while a multi-channel combination valve technology enables precise source switching and input. Thanks to the extremely low dead space design of the combination valve, residual precursor is minimized, which is critical for achieving materials with steep interface profiles.

Moreover, differential pressure control between the bypass and main gas lines significantly reduces fluctuations in source pressure and concentration, thereby enhancing process repeatability and stability. The system also features embedded pipeline gas injection nozzles that facilitate rapid and uniform mixing of the reactive species on the substrate surface, effectively preventing pre-reaction events and improving film uniformity and quality. In addition, a resistive rapid heating and cooling furnace provides precise temperature control with fast response, meeting the stringent requirements of high-temperature deposition processes. Integrated with advanced automation, real-time monitoring, and robust safety protection measures—such as data acquisition, fault diagnosis, and remote control—the overall system ensures efficient, stable, and safe operation. With these comprehensive technological advantages, the MOCVD equipment offers a highly uniform, repeatable, and reliable platform for the epitaxial growth of advanced semiconductor materials like GaN and ZnO.